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NT MDT America Inc atomic force microscopy solver p47-pro
Atomic Force Microscopy Solver P47 Pro, supplied by NT MDT America Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/atomic+force+microscopy+solver+p47-pro/atomic+force+microscope+ntegra+prima/10__1007_slash_s10971___024___06573___9-48-5-11
Average 90 stars, based on 1 article reviews
atomic force microscopy solver p47-pro - by Bioz Stars, 2026-10
90/100 stars

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Article Title: A Self-Oscillated Organic Synapse for In-Memory Two-Factor Authentication.
Article Snippet: Atomic force microscopy (AFM) has performed on a Solver P47-PRO (NT-MDT Co., Moscow, Russia) microscope to monitor the surface morphology.

Article Title: One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate
Article Snippet: The morphology of pit-patterned substrates and grown structures with spatially ordered Ge(Si) QDs was studied using atomic force microscopy (AFM) (Solver P47-PRO, NT-MDT Spectrum Instruments, Moscow, Russia) and scanning electron microscopy (SEM) (Hitachi SU8220, Hitachi, Tokyo, Japan), including the use of focused ion beam etching (FIB) to analyze the cross-section of the structure.

Article Title: Effect of Carbon Dots Concentration on Electrical and Optical Properties of Their Composites with a Conducting Polymer.
Article Snippet: The morphology of the CQDs and CQD/PEDOT:PSS composites with 3%, 5%, and 50% concentrations was studied using atomic force microscopy (AFM) via SOLVER P47-PRO NT-MDT.

Article Title: 90% yield production of polymer nano-memristor for in-memory computing
Article Snippet: Atomic force microscopy (AFM) measurements were performed on a Solver P47-PRO (NT-MDT Co., Moscow, Russia) microscope to monitor the surface morphology of the polymer thin films.

Microscopy:

Article Title: Structural properties and electrical characteristics of BiFeO3 thin films with RE2O3 buffer layers
Article Snippet: In this paper, we successfully utilized a simple sol-gel spin-coating method to deposit RE2O3-buffered (Ce2O3, Gd2O3, and Tb2O3) BiFeO3 thin films onto SrRuO3/n -Si substrates.. A thorough investigation of various characteristics, such as depth profile, structure, morphology, chemical components, leakage current density, and ferroelectric properties, was conducted.. The results showed that the use of a Gd2O3 buffer layer significantly reduced the leakage current density to 4.28 × 10 −6 A/ cm, which is three orders of magnitude lower than that of the control BiFeO3 thin film (7.65 × 10 −3 A/cm) at 300 kV/cm.

Article Title: Hierarchical Surface Structures and Large-Area Nanoscale Gratings in As 2 S 3 and As 2 Se 3 Films Irradiated with Femtosecond Laser Pulses
Article Snippet: .. The thickness of the As 2 S 3 and As 2 Se 3 films measured by the atomic force microscopy (AFM, Solver P47-Pro, NT-MDT, Moscow, Russia) amounted to 576 ± 5 and 842 ± 5 nm, respectively. .. The elemental composition of the initial films was evaluated using scanning electron microscope (SEM JEOL JSM-6010, Akishima, Japan) equipped with an energy-dispersive spectrometer (JEOL EX94400T4L11 Akishima, Japan).

Article Title: Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique
Article Snippet: The switching properties, distributions of SET/RESET voltage, data retention, and endurance characteristics were measured by using the Keithley 4200 system (Tektronix, Beaverton, OR, USA). .. Surface morphology of the sample is observed by atomic force microscopy (AFM, SOLVER P47-PRO, NT-MDT, Zelenograd, Moscow, Russia) and scanning electron microscopy (SEM, JOEL JSM 6500, JOEL, Tokyo, Japan). ..

Article Title: Hierarchical Surface Structures and Large-Area Nanoscale Gratings in As 2 S 3 and As 2 Se 3 Films Irradiated with Femtosecond Laser Pulses.
Article Snippet: .. The thickness of the As2S3 and As2Se3 films measured by the atomic force microscopy (AFM, Solver P47-Pro, NT-MDT, Moscow, Russia) amounted to 576 ± 5 and 842 ± 5 nm, respectively. .. The elemental composition of the initial films was evaluated using scanning electron microscope (SEM JEOL JSM-6010, Akishima, Japan) equipped with an energy-dispersive spectrometer (JEOL EX94400T4L11 Akishima, Japan).

Electron Microscopy:

Article Title: Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique
Article Snippet: The switching properties, distributions of SET/RESET voltage, data retention, and endurance characteristics were measured by using the Keithley 4200 system (Tektronix, Beaverton, OR, USA). .. Surface morphology of the sample is observed by atomic force microscopy (AFM, SOLVER P47-PRO, NT-MDT, Zelenograd, Moscow, Russia) and scanning electron microscopy (SEM, JOEL JSM 6500, JOEL, Tokyo, Japan). ..



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